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Three Years in Exeter: The Good, the Bad, and the Ugly

Myself at Graduation Day, July 2026 ⚠️ Disclaimer:  All opinions, experiences, and criticisms shared in this post are entirely my own, based on my personal time as a student at the University of Exeter. They are subjective reflections only. This post is written for honest personal expression and discussion purposes. I do not claim every detail is objectively verified and have no intention to defame, harm, or make formal accusations against any person or institution. Readers should form their own conclusions. This is an exercise of personal expression and free speech. Welcome back, folks. By the time you're reading this post, I'll have already graduated from university. For those of you who are new here, I studied for a BEng in Electrical and Electronic Engineering at the University of Exeter. Looking back on the past three years, its certainty been one hell of a ride. In this post, I'm going to share what it's like to study at the University of Exeter, and well, what un...
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A Case Study on Hexagonal Boron Nitride–Based Anti‑Reflection Coatings for Solar Cells

Solar Panels Background and Literature Review Solar cells require the use of anti-reflection coatings (ARC) that consist of one or more thin films carefully chosen for their thicknesses and refractive indexes in order to minimise reflection losses caused by common solar cell materials such as silicon, which suffers an approximate 30% loss without the use of ARC due to its high refractive index (n ≈ 3.5 – 4, in typical operation range of 400 to 1100 nm)[1],[7]. Existing ARC materials (e.g. silicon nitride, silicon oxide) are mostly oxide-based (except silicon nitride) and are prone to premature aging, UV-induced degradation, and the added complexity and cost associated with requiring protective encapsulation of such materials [2].  Hexagonal boron nitride (h-BN) is deemed a suitable alternative ARC material as h-BN is a wide-bandgap (~6.2 eV) [3] 2D material with a refractive index of approximately 2.23 [4], along with high chemical/thermal stability, and excellent mechanical robust...

A Technical Investigation into the Evolution of Discrete Power MOSFET Structures

Various Discrete Power MOSFETs In modern electrical and electronic systems, the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of the most important and widely used semiconductor devices. Its high input impedance, fast switching capability, and low power consumption offer significant advantages over conventional Bipolar Junction Transistors (BJTs), making it the dominant switching device in applications ranging from low-power digital circuits to high-power energy conversion systems. Ever since its introduction in the 1960s, the MOSFET has undergone continuous structural refinement, with power-focused variants emerging from the 1970s onward to meet increasingly demanding requirements for efficiency, power handling capability, and switching speed. The progression from planar MOSFETs to VMOS, DMOS, trench-gate, split/shield-gate, and superjunction technologies reflects a series of engineering solutions aimed at reducing conduction losses while maintaining high breakdown...